CHINESE JOURNAL OF ENERGETIC MATERIALS
+高级检索
原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度(英)
DOI:
作者:
作者单位:

作者简介:

FENG Hong-yan(1978-),female,M.Sc. degree,engaging in the parameters of the SCB plasma. e-mail: yhfeng1978@hotmail.com

通讯作者:

基金项目:

National Natural Science Foundation (20175008) and Young Scholar Foundation of Nanjing University of Science and Technology (Njust200303)


Measurement of the Semiconductor Bridge (SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    在原子发射光谱双谱线法的基础上,设计了含有两个干涉滤光片和光电倍增管双谱线测温系统。仪器的最高的时间分辨率为0.1 μs。讨论了不同能量输入条件下SCB等离子体的温度和等离子体的存在时间。实验结果表明在电压24~32 V,电容68 μF不变的情况下,等离子体的温度从2710 K升高到3880 K,等离子体存在时间从170.7 μs 上升到283.4 μs。

    Abstract:

    A system consisting of two interference filters of different wavelength and two photo-multiplier detectors was used to measure the time evolution of the SCB plasma temperature based on the double line of atomic emission spectroscopy. The highest temporal resolution of the apparatus was 0.1 μs. The results show that when the voltage is 24-32 V and all capacitances are 68 μF, the highest temperature and duration of the SCB plasma increases from 2710 K to 3880 K and from 170.7 μs to 283.4 μs, respectively.

    参考文献
    相似文献
    引证文献
文章指标
  • PDF下载次数:
  • HTML阅读次数:
  • 摘要点击次数:
  • 引用次数:
引用本文

冯红艳,李艳,张琳,等.原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度(英)[J].含能材料,2007,15(2):134-136.
FENG Hong-yan, LI Yan, ZHANG Lin, et al. Measurement of the Semiconductor Bridge (SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy[J]. Chinese Journal of Energetic Materials, 2007, 15(2):134-136.

复制
历史
  • 收稿日期: 2006-07-17
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2011-10-31
  • 出版日期: