Metal oxide is a type of ionic compound in which metal cations and oxygen anions are arranged into different crystal structures through ionic bond. The d-shells of some metal oxides are not completely filled wtih various unique properties， such as wide band gap， high dielectric constant， active electron transfer ability and excellent conductivity， etc. So they are widely used in the catalytic field. The current research status of thermal decomposition of ammonium perchlorate catalyzed by four different types of metal oxide semiconductor materials， such as single metal oxide， composite metal oxide， doped metal oxide， and supported metal oxide were introduced， the catalytic mechanism and factors affecting the catalytic effect were discussed. For the P-type metal oxide semiconductor materials， the narrower the band gap ， the lower the Fermi energy level， the higher the escape energy， and the greater the catalytic effect. For the N-type metal oxide semiconductor materials， the wider the band gap， the higher the Fermi energy level， the lower the escape energy， and the better the catalytic effect. In order to make full use of the advantages and overcome the defects of metal oxides， impurity elements are often introduced into metal oxides to form ionic lattice defects and create new local impurity energy levels to change the electronic transition， so as to improve the catalytic performance of metal oxides. Whether composite metal oxide or supported metal oxide， there is a positive synergistic catalytic effect on AP. The development of porous nanotube P-type metal oxides， doped metal oxides， and supported metal oxide materials with small band gap is still a major concern. Exploring the core-shell composite materials based on ammonium perchlorate， P-N junction metal oxide semiconductor catalytic materials， and revealing the migration law of carriers between the two kinds of semiconductors P-N interface are expected to be a new way to improve the catalytic efficiency.