CHINESE JOURNAL OF ENERGETIC MATERIALS
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半导体桥上尖角、圆孔对其电爆性能的影响(英)
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Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance
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    摘要:

    设计了14种带有尖角和圆孔的半导体桥,研究了在电容放电发火条件下尖角、圆孔对其发火时间、发火所消耗的能量等性能参数的影响规律,并从半导体桥的作用机理方面对实验结果进行了分析。结果表明,SCB上V型尖角使得SCB发火时间和发火所消耗的能量明显降低,而圆孔对SCB发火性能影响不明显。

    Abstract:

    Fourteen kinds of SCBs with V-type angle and hole were designed,and the electro-explosive performances including the function time,energy required were investigated with firing by capacitor discharge circuit. The plasma firing mechanism of SCB was analyzed. Results indicate that the function time and the energy required decrease significantly for SCB firing with the V-type angle on the SCB decreasing,while the holes have a little effect on the explosive performance of SCB.

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周彬,毛国强,秦志春,等.半导体桥上尖角、圆孔对其电爆性能的影响(英)[J].含能材料, 2009, 17(3):349-352. DOI:10.3969/j. issn.1006-9941.2009.03.023.
ZHOU Bin, MAO Guo-qiang, QIN Zhi-chun, et al. Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance[J]. Chinese Journal of Energetic Materials, 2009, 17(3):349-352. DOI:10.3969/j. issn.1006-9941.2009.03.023.

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  • 收稿日期: 2008-07-28
  • 最后修改日期: 2009-01-06
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  • 在线发布日期: 2011-11-04
  • 出版日期: 2009-06-25