CHINESE JOURNAL OF ENERGETIC MATERIALS
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半导体桥生成等离子体温度的测量
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国家自然科学基金(50806033); 重点实验室基金资助项目


Measurement of Semiconductor Bridge Plasma Temperature under Different Capacitances Using Spectroscopic Method
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    摘要:

    应用原子发射光谱双谱线测温法原理,采用高速数字存贮示波器对半导体桥生成的等离子体温度以及桥上电压、电流变化进行了实时瞬态测量,获得了等离子体温度以及半导体桥上消耗的能量随时间变化的曲线,在半导体桥两端施加21 V电压的条件下,对6.8、15、47、68、100 μF五种不同容量的钽电容对半导体桥的作用时间、消耗能量以及生成等离子体温度的影响进行了研究,结果表明: 半导体桥生成等离子体最高温度与电容呈线性关系,其最高温度由6.8 μF时的2242 K升高到100 μF时的3324 K。

    Abstract:

    The real-time measurement of the SCB voltage,current and plasma temperature based on the double-line method of atomic emission spectroscopy was conducted by using high-speed digital oscilloscope. The curves of SCB plasma temperature and SCB consumed energy versus time were obtained. The effects of five different capacitances (6.8,15,47,68,100 μF) on the functioning time,SCB consumed energy and SCB plasma maximum temperature were analyzed respectively when the charging voltage was 21 V. The results show that there is a linear relationship between the maximum temperatures and the capacitances. SCB plasma maximum temperature increases from 2242 K to 3324 K when capacitance increases from 6.8 μF to 100 μF.

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张文超,王文,周彬,等.半导体桥生成等离子体温度的测量[J].含能材料, 2009, 17(3):344-348. DOI:10.3969/j. issn.1006-9941.2009.03.022.
ZHANG Wen-chao, WANG Wen, ZHOU Bin, et al. Measurement of Semiconductor Bridge Plasma Temperature under Different Capacitances Using Spectroscopic Method[J]. Chinese Journal of Energetic Materials, 2009, 17(3):344-348. DOI:10.3969/j. issn.1006-9941.2009.03.022.

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  • 收稿日期: 2008-07-28
  • 最后修改日期: 2009-01-04
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  • 在线发布日期: 2011-11-04
  • 出版日期: 2009-06-25