CHINESE JOURNAL OF ENERGETIC MATERIALS
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两种粒度叠氮化铅半导体桥点火特性研究
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南京理工大学

作者简介:

马鹏(1985-),博士研究生,从事半导体点火相关研究

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Ignition Character of the Common and Superfine Lead Azide by Semiconductor Bridge
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Nanjing University of Science and Technology

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    摘要:

    用半导体桥(Semiconductor Bridge,SCB)研究了点燃两种不同粒度(细化5~15 μm和结晶300 μm)的叠氮化铅(Lead Azide,LA)所需的电压、电流和光信号。结果表明:细化LA被SCB点燃时,其出光时间早于SCB二次峰结束时间,而结晶LA出光时间要晚于SCB二次峰结束时间。随SCB点火电压增加,SCB二次峰的持续时间以及出光时间均缩短。由D-最优化法所得两种LA点火数据显示:细化LA的最小发火电压是结晶LA的50%。

    Abstract:

    The signal of voltage, current and light required to ignite the common and superfine lead azide (LA) were studied by semiconductor bridge (SCB). Results show that the appearance time of light is shorter than the end time of the second peak, but for the common LA, it is opposite. With increasing the ignition voltage, the duration time of the second peak and appearance time of light for two kinds of samples are short. The ignition data of the two kinds of LA obtained by D-optimization show that the minimum firing voltage of superfine LA is about 50% less than that of the common LA.

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马鹏,张琳,朱顺官,等.两种粒度叠氮化铅半导体桥点火特性研究[J].含能材料, 2012, 20(2):198-201. DOI:10.3969/j. issn.1006-9941.2012.02.013.
MA Peng, ZHANG Lin, ZHU Shun-guan, et al. Ignition Character of the Common and Superfine Lead Azide by Semiconductor Bridge[J]. Chinese Journal of Energetic Materials, 2012, 20(2):198-201. DOI:10.3969/j. issn.1006-9941.2012.02.013.

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历史
  • 收稿日期: 2011-05-16
  • 最后修改日期: 2011-09-16
  • 录用日期: 2011-10-28
  • 在线发布日期: 2012-04-23
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