CHINESE JOURNAL OF ENERGETIC MATERIALS
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负温度系数热敏电阻对半导体桥电爆性能影响
作者:
作者单位:

(1. 南京理工大学, 江苏 南京 210094; 2. 航天科工六院41所, 内蒙古 呼和浩特 010010)

作者简介:

李勇(1986-),男,博士研究生,主要从事半导体桥点火相关研究。e-mail: liyongnust@126.com 通信联系人: 周彬(1971-),女,副研究员,主要从事半导体桥火工品研究。e-mail: zhoubin8266@sina.com.cn

通讯作者:

周彬(1971-),女,副研究员,主要从事半导体桥火工品研究。e-mail: zhoubin8266@sina.com.cn

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Influence of NTC Thermistors on Electro-explosive Performances of SCB
Author:
Affiliation:

(1. Nanjing University of Science & Technology, Nanjing 210094, China; 2. The Six Academy of China Aerospace Science & Industry Group 41, Hohhot 010010, China)

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    摘要:

    温度是影响火工品电磁防护其防护效果的主要因素, 负温度系数(NTC)热敏电阻用于半导体桥(SCB)能有效提高其射频感度。采用恒流激励和电容放电两种实验, 对不同环境温度下NTC热敏电阻对SCB性能的影响规律进行了研究。通过1 A 5 min恒流激励实验, 分析了室温(25 ℃)和高温(70 ℃)时NTC热敏电阻的并联分流情况; 25 ℃时NTC热敏电阻分走59%回路电流, 70 ℃时,对小尺寸SCB(S-SCB)的分流率最大达到63%。在电容放电激励下, 探讨了并联NTC热敏电阻SCB在25 ℃和70 ℃时电爆性能的变化情况。结果表明, 并联NTC热敏电阻前后, 典型尺寸(L-SCB)在25 ℃和70 ℃下的爆发时间和爆发消耗能量均无显著性变化。而S-SCB并联NTC热敏电阻后, 当温度从25 ℃升至70 ℃,爆发时间从5.94 μs增长到7.18 μs, 爆发消耗积分能量从0.388 mJ降低到0.178 mJ。

    Abstract:

    The radio frequency (RF) sensitivity of semiconductor bridge (SCB) initiator can be improved by negative temperature coefficient (NTC) thermistors and temperature is the key factor for the protection effect. In order to analyze the influence of NTC thermistors on SCB electro-explosive performances at different environment temperature, constant current (1A) was forced to flow through igniters for 300 s at room temperature(25 ℃)and high temperature(70 ℃). Results show that about 59% current of small size SCB (S-SCB) is shunted by NTC thermistor at 25 ℃, and reaching the maximum (63%) at 70 ℃. Furthermore, with capacitor discharge experiment, the electro-explosive performances of the SCB initiators in parallel with NTC thermistors were discussed at above temperatures. Results indicate that burst time and consumption energy of large-SCB(L-SCB) initiators have no significant change at two temperature. But, as for S-SCB, burst time grows from 5.94 μs to 7.18 μs, and consumption energy reduces from 0.388 mJ to 0.178 mJ when temperature ranges from 25 ℃ to 70 ℃.

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引用本文

李勇,李凯,刘恩良,等.负温度系数热敏电阻对半导体桥电爆性能影响[J].含能材料, 2014, 22(6):808-812. DOI:10.11943/j. issn.1006-9941.2014.06.018.
LI Yong, LI Kai, LIU En-liang, et al. Influence of NTC Thermistors on Electro-explosive Performances of SCB[J]. Chinese Journal of Energetic Materials, 2014, 22(6):808-812. DOI:10.11943/j. issn.1006-9941.2014.06.018.

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  • 收稿日期: 2013-12-04
  • 最后修改日期: 2014-03-04
  • 录用日期: 2014-04-01
  • 在线发布日期: 2014-12-26
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