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Measurement of the Semiconductor Bridge (SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy
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    Abstract:

    A system consisting of two interference filters of different wavelength and two photo-multiplier detectors was used to measure the time evolution of the SCB plasma temperature based on the double line of atomic emission spectroscopy. The highest temporal resolution of the apparatus was 0.1 μs. The results show that when the voltage is 24-32 V and all capacitances are 68 μF, the highest temperature and duration of the SCB plasma increases from 2710 K to 3880 K and from 170.7 μs to 283.4 μs, respectively.

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冯红艳,李艳,张琳,等.原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度(英)[J].含能材料,2007,15(2):134-136.
FENG Hong-yan, LI Yan, ZHANG Lin, et al. Measurement of the Semiconductor Bridge (SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy[J]. Chinese Journal of Energetic Materials,2007,15(2):134-136.

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History
  • Received:July 17,2006
  • Revised:
  • Adopted:
  • Online: October 31,2011
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