Page 210 - 《含能材料》火工品技术合集 2015~2019
P. 210

1 7 2                                                     !",#$,%&',()),*+,,-.,/01,!2

           (2)|}CwxÞÅ7vRSC~yL, ¢†                                (1):106-110.
                                                              [3]JongdaeKim,TaeMoonRoh,KyoungIK Cho,etal.Optical
         ‡CwxhV7vRSnÖiz, 56, RS4P’Ã
                                                                  characteristicsofsemiconductorbridgeunderhighcurrentdensi
         º3 SCBÄÅ»ÉÒ¦CpK7+Æ4õÚ。                                   tycondition[J].IEEETransactionsonElectronDevices,2001,
           (3)SCB9þ¦Å,Õ, [O®Èwx;{rC                              48(5):852-857.
                                                              [4]!<n,=ö>,-×?,É.”²6789RNÖ×RL”
         d= V 7 v SCBR ^ _ C | } ® È w x, Ô O ¿ Á
                                                                  ¨©WX[J].;;ñ<,2012( y@):73-77.
         SCB†‡CïHð®È~wx。56, sL-ÈÇ                               LILiming,YIN Guofu,WANG Jingya,etal.Researchonthe
                                                                  antistatic capacitance reinforcementin micro semiconductor
         .AaX, /0ÈÇ@ A B { r C ¿ |, Ã ø = SCB
                                                                  bridge[J].ActaArmamentarii,2012(Supplement):73-77.
         :;<C?d@AB7v†‡C~wx。                                  [5] MarxK D,IngersollD,BickesR W.Electricalmodelingof
           (4)Ž\ SCBR^_C†‡wxƒLMº                                wemiconductorbridge(SCB) BNCP detonatorswith electro
                                                                  chemicalcapacitorfiringsets[M].USDOE,Washington,DC,
         K。56, = SCBijCXö;YH SCBÇ<CÈÇ
                                                                 1998.
         @AB, sŒ512Š3aXŽH({C¿|。                             [6]BickesRW Jr.WackerbarthD E.SCB thermiteigniterstudies
                                                                  semiconductorbridge[R].AIAA/ASME/SAE/ASEEJointPropul
                                                                  sionConference&Exhibit,33rd,Seattle,WA,July6-9,1997.
         rs!=:
                                                              [7]AB,CDt,E”n,É.SCBÄÅ»sK1²”8F½é
          [1]Strohm G,SonS.PerformanceCharacterizationofNanoscale
                                                                  BCWX[J].;;ñ<,2009,30(2):305-307.
             EnergeticMaterialson SemiconductorBridges(SCBs)[C] ∥
                                                                 LU Bin,HONG Zhimin,REN Xiaoming,etal.Researchon
             48thAIAAAerospaceSciencesMeetingIncludingtheNew Hori
                                                                  SCBenergyexchangedeviceinmicrosolidpropellant[J].Acta
             zonsForum andAerospaceExposition.2010.
                                                                  Armamentarii,2009,30(2):305-307.
          [2]456,7 & Z,8 9 :,É.6 7 8 9 : ; < W X C ± ½ ¯
                                                              [8]KlassenSandraE,SorensenN Robert.Aninvestigationofcorro
             [J].;;ñ<,2003(1):106-110.
                                                                  sioninsemiconductorbridgeexplosivedevices[R].SandiaNa
             ZHU Fengchun,XU Zhenxiang,CHEN Xiwu,etal.Study
                                                                  tionalLaboratories.2007.
             new progressiononSCBinitiator[J].ActaArmamentarii,2003
         FailureMechanism ofSCBElectrodePlugsunderDifferentStorageConditions
                                                                2
               1
                                        1
                                                                             2
                                                  2
                          1
                                                                                           1
         LIFang ,ZHANG Rui,DUZhenhua ,CUIFeifei,ZHOUDexin,WANG Sheng ,FUDongxiao ,LIGeng        1
         (1.ShaanxiAppliedPhysicsChemistryResearchInstitute,Xi′an710061,China;2.EquipmentDepartmentofPLANavy,Beijing100841,China)
         Abstract:Toacquirethefailuremodeandfailuremechanism ofsemiconductorbridge(SCB)initiatorintheprocessoflongterm
         storage,thechangesinresistanceandappearanceofSCBelectrodeplugsbeforeandafterstorageinvariousenvironmentstress
         werestudiedbyacceleratedlifetest,resistancetestandscanelectronmicroscopetest.Resultsshow thatasingletemperature
         (71℃)stressdoesnotcausethecorrosionofSCBelectrodeplugsandaccretionofresistance.Temperatureandhumidity(80℃,
         RH=95%)stresscancauseslow corrosionofleadingwireofSCBelectrodeplugsandresistanceaddingslightly.Underthetem
         peratureandhumidity(80℃,RH=95%)stress,SCBelectrodeplugswithsaltwaterafterstorageappearseriouscorrosionphe
         nomenon.AconclusionofacceleratingthecorrosionofSCBelectrodeplugsbychlorineionandcorrosiondegreeofjudgingthe
         solderingjointsbyresistancesizeofSCBelectrodeplugsisobtained.NamelythegreatertheresistanceofSCBelectrodeplug,the
         deeperthecorrosiondegreeofbridgeorsolderingjoints
         Keywords:initiator;semiconductorbridge(SCB)electrodeplugs;acceleratedlifetest;corrosion
         CLCnumber:TJ55;O64              Documentcode:A                DOI:10.11943/j.issn.10069941.2015.02.012






















         ChineseJournalofEnergeticMaterials,Vol.23,No.2,2015(168-172)  !"#$           www.energeticmaterials.org.cn
   205   206   207   208   209   210   211