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(2)|}CwxÞÅ7vRSC~yL, ¢ (1):106-110.
[3]JongdaeKim,TaeMoonRoh,KyoungIK Cho,etal.Optical
CwxhV7vRSnÖiz, 56, RS4PÃ
characteristicsofsemiconductorbridgeunderhighcurrentdensi
º3 SCBÄÅ»ÉÒ¦CpK7+Æ4õÚ。 tycondition[J].IEEETransactionsonElectronDevices,2001,
(3)SCB9þ¦Å,Õ, [O®Èwx;{rC 48(5):852-857.
[4]!<n,=ö>,-×?,É.²6789RNÖ×RL
d= V 7 v SCBR ^ _ C | } ® È w x, Ô O ¿ Á
¨©WX[J].;;ñ<,2012( y@):73-77.
SCBCïHð®È~wx。56, sL-ÈÇ LILiming,YIN Guofu,WANG Jingya,etal.Researchonthe
antistatic capacitance reinforcementin micro semiconductor
.AaX, /0ÈÇ@ A B { r C ¿ |, Ã ø = SCB
bridge[J].ActaArmamentarii,2012(Supplement):73-77.
:;<C?d@AB7vC~wx。 [5] MarxK D,IngersollD,BickesR W.Electricalmodelingof
(4)\ SCBR^_CwxLMº wemiconductorbridge(SCB) BNCP detonatorswith electro
chemicalcapacitorfiringsets[M].USDOE,Washington,DC,
K。56, = SCBijCXö;YH SCBÇ<CÈÇ
1998.
@AB, s5123aXH({C¿|。 [6]BickesRW Jr.WackerbarthD E.SCB thermiteigniterstudies
semiconductorbridge[R].AIAA/ASME/SAE/ASEEJointPropul
sionConference&Exhibit,33rd,Seattle,WA,July6-9,1997.
rs!=:
[7]AB,CDt,En,É.SCBÄÅ»sK1²8F½é
[1]Strohm G,SonS.PerformanceCharacterizationofNanoscale
BCWX[J].;;ñ<,2009,30(2):305-307.
EnergeticMaterialson SemiconductorBridges(SCBs)[C] ∥
LU Bin,HONG Zhimin,REN Xiaoming,etal.Researchon
48thAIAAAerospaceSciencesMeetingIncludingtheNew Hori
SCBenergyexchangedeviceinmicrosolidpropellant[J].Acta
zonsForum andAerospaceExposition.2010.
Armamentarii,2009,30(2):305-307.
[2]456,7 & Z,8 9 :,É.6 7 8 9 : ; < W X C ± ½ ¯
[8]KlassenSandraE,SorensenN Robert.Aninvestigationofcorro
[J].;;ñ<,2003(1):106-110.
sioninsemiconductorbridgeexplosivedevices[R].SandiaNa
ZHU Fengchun,XU Zhenxiang,CHEN Xiwu,etal.Study
tionalLaboratories.2007.
new progressiononSCBinitiator[J].ActaArmamentarii,2003
FailureMechanism ofSCBElectrodePlugsunderDifferentStorageConditions
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2
2
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LIFang ,ZHANG Rui,DUZhenhua ,CUIFeifei,ZHOUDexin,WANG Sheng ,FUDongxiao ,LIGeng 1
(1.ShaanxiAppliedPhysicsChemistryResearchInstitute,Xi′an710061,China;2.EquipmentDepartmentofPLANavy,Beijing100841,China)
Abstract:Toacquirethefailuremodeandfailuremechanism ofsemiconductorbridge(SCB)initiatorintheprocessoflongterm
storage,thechangesinresistanceandappearanceofSCBelectrodeplugsbeforeandafterstorageinvariousenvironmentstress
werestudiedbyacceleratedlifetest,resistancetestandscanelectronmicroscopetest.Resultsshow thatasingletemperature
(71℃)stressdoesnotcausethecorrosionofSCBelectrodeplugsandaccretionofresistance.Temperatureandhumidity(80℃,
RH=95%)stresscancauseslow corrosionofleadingwireofSCBelectrodeplugsandresistanceaddingslightly.Underthetem
peratureandhumidity(80℃,RH=95%)stress,SCBelectrodeplugswithsaltwaterafterstorageappearseriouscorrosionphe
nomenon.AconclusionofacceleratingthecorrosionofSCBelectrodeplugsbychlorineionandcorrosiondegreeofjudgingthe
solderingjointsbyresistancesizeofSCBelectrodeplugsisobtained.NamelythegreatertheresistanceofSCBelectrodeplug,the
deeperthecorrosiondegreeofbridgeorsolderingjoints
Keywords:initiator;semiconductorbridge(SCB)electrodeplugs;acceleratedlifetest;corrosion
CLCnumber:TJ55;O64 Documentcode:A DOI:10.11943/j.issn.10069941.2015.02.012
ChineseJournalofEnergeticMaterials,Vol.23,No.2,2015(168-172) !"#$ www.energeticmaterials.org.cn